Watanabe Heiji | Graduate School Of Engineering Osaka University
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概要
関連著者
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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WATANABE Heiji
Graduate School of Engineering, Osaka University
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Kadomura Shingo
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Iwamoto Hayato
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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SHIMURA Takayoshi
Graduate School of Engineering, Osaka University
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Yasutake K
Graduate School Of Engineering Osaka University
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HOSOI Takuji
Graduate School of Engineering, Osaka University
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Minami Takashi
Canon Anelva Corporation
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Ikuta Tetsuya
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Fujita Shigeru
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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KOSUDA Motomu
Canon ANELVA Corporation
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Horie Shinya
Graduate School Of Engineering Osaka University
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YASUTAKE Kiyoshi
Graduate School of Engineering, Osaka University
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SAMUKAWA Seiji
Institute of Fluid Science, Tohoku University
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Sakata Osami
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
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Fukuda Seiichi
Institute Of Fluid Science Tohoku University
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Samukawa Seiji
Institute Of Fluid Science Tohoku University
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IKOMA Toru
Institute of Fluid Science, Tohoku University
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TAGUCHI Chihiro
Institute of Fluid Science, Tohoku University
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IWAMOTO Hayato
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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KADOMURA Shingo
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Hosoi Takuji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Taguchi Chihiro
Institute Of Fluid Science Tohoku University
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OGAWA Osamu
Semiconductor Leading Edge Technologies, Inc. (Selete)
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AMIAKA Toshio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Inoue Tomoyuki
Graduate School Of Engineering Yokohama National University
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Kasuya Tooru
Semiconductor Leading Edge Technologies Inc. (selete)
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Lee Myoungbum
Semiconductor Leading Edge Technologies Inc. (selete)
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Nakamura Genji
Semiconductor Leading Edge Technologies Inc. (selete)
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Ikoma Toru
Institute Of Fluid Science Tohoku University
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IKUTA Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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MIYANAMI Yuki
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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FUJITA Shigeru
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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Miyanami Yuki
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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KUTSUKI Katsuhiro
Graduate School of Engineering, Osaka University
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OKAMOTO Gaku
Graduate School of Engineering, Osaka University
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Imai Yasuhiko
Research And Development Division Kikkoman Corporation
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Okamoto Gaku
Graduate School Of Engineering Osaka University
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Kutsuki Katsuhiro
Graduate School Of Engineering Osaka University
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HORIE Shinya
Graduate School of Engineering, Osaka University
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KITANO Naomi
Canon ANELVA Corporation
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc.
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Chikyow Toyohiro
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Kimura Shigeru
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Sayo, Hyogo 679-5198, Japan
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Nishida Akio
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ando Atsushi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Kamohara Siro
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shimura Takayoshi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Shimura Takayoshi
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Shimokawa Daisuke
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Lee Myoungbum
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Nakamura Genji
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Sakata Osami
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Sayo, Hyogo 679-5198, Japan
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Naitou Yuichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ogiso Hisato
Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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Yasutake Kiyoshi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Hosoi Takuji
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kasuya Tooru
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Amiaka Toshio
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Fujita Shigeru
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Horie Shinya
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Ikuta Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Yano Fumiko
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kitano Naomu
Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Minami Takashi
Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kosuda Motomu
Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Shiraishi Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
著作論文
- Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
- In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
- Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods
- Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks
- Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-$k$ Gate Stacks
- Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2 Films Evaluated by Scanning Capacitance Microscopy
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping