Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping
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概要
- 論文の詳細を見る
In-situ boron-doped silicon selective epitaxial growth (SEG) was investigated by comparison with in-situ As-doped SEG. The dopant concentration and growth rate of the film grown under low pressure are high for B-doped SEG, while they are high under atmospheric pressure (AP) for As-doped SEG. This difference is interpreted to be due to the strong effects of HCl etching under AP and surface segregation of As. By optimizing the growth rate and temperature, we have successfully grown epitaxial Si layers with high B concentrations of $2.3 \times 10^{20}$ atoms/cm3.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
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Kadomura Shingo
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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Iwamoto Hayato
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Ikuta Tetsuya
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Fujita Shigeru
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Shimura Takayoshi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yasutake Kiyoshi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Fujita Shigeru
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Ikuta Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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