Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices

概要

論文の詳細を見る
We propose a fluorine (F) treatment technique that is suitable for threshold voltage ($V_{\text{th}}$) modulation in p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with the atomic layer deposition (ALD) TiN/HfO2 gate structure. A work function near the band edge is achieved using the F treatment technique without the degradation of hole mobility in PMOSFETs. $V_{\text{th}}$ shift value is almost the same regardless of gate length. The barrier height shift attributable to the F treatment corresponds closely to the $V_{\text{th}}$ shift. It is found that the F treatment technique modulates the effective work function. No $V_{\text{th}}$ shift in n-channel MOSFET (NMOSFETs), namely, the ALD-TiN/HfSix/HfO2 gate stack structure, is observed with F treatment. It is confirmed that F treatment is a suitable technique for complementary MOSFET (CMOSFETs) due to the confinement of $V_{\text{th}}$ shift only to PMOSFETs.
2008-04-25