Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor

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概要

• 論文の詳細を見る

• We have investigated the AsH3 and GeH4 flow rate dependences of As concentration and growth rate for atmospheric in situ As-doped SiGe selective epitaxial growth. A high As concentration of $3.2\times 10^{19}$ atoms/cm3 and a high growth rate of 13 nm/min were achieved for Si0.79Ge0.21 selective epitaxial growth. The good selectivity was confirmed, and the epitaxial film showed high crystalline quality, a smooth surface and an abrupt change in the dopant profile at the interface. These results were interpreted in terms of the suppression of As surface segregation and the enhancement of As diffusion due to Ge incorporation in Si growth.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Yasutake Kiyoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Kadomura Shingo

  Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Iwamoto Hayato

  Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation

• Miyanami Yuki

  Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation

• Ikuta Tetsuya

  Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation

• Shimura Takayoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Fujita Shigeru

  Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation

• Kadomura Shingo

  Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

• Miyanami Yuki

  Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

• Iwamoto Hayato

  Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

• Fujita Shigeru

  Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

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