Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition

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概要

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• We have developed a novel antistatic technique for suppressing focused ion beam (FIB)-induced charging in a combined system of an FIB and a scanning electron microscope. Microprobing and FIB-assisted carbon deposition are utilized to make a current path through which FIB-induced positive charges flow to ground. The effects of our method on charge neutralization capability were investigated by measuring parameter shifts of n-channel metal–oxide–semiconductor transistors. The results showed that our method prevents parameter shifts of transistors even for high-current (nanoampere-order) FIB irradiation. We also evaluated the upper-limit resistance of the current path formed by FIB-assisted carbon deposition to prevent charging induced by a given FIB current.

• 2005-11-15

著者

• Yasutake Kiyoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Komoda Hirotaka

  Electronic Devices Company Ricoh Co. Ltd.

• Nakatani Ikuko

  Application Engineering Department, SII NanoTechnology Inc., 36-1 Takenoshita, Oyama-cho, Sunto-gun, Shizuoka 410-1393, Japan

• Yasutake Kiyoshi

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Komoda Hirotaka

  Electronic Devices Company, Ricoh Co., Ltd., 13-1 Himemuro-cho, Ikeda, Osaka 563-8501, Japan

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