Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
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概要
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Lattice undulation of Silicon-on-Insulator (SOI) layers of bonded SOI wafers was observed by synchrotron X-ray topography. Patterns observed on topographs depended on the thickness of the SOI layer, the camera distance between a specimen and an X-ray film, and the diffraction geometry of the Laue and Bragg cases. The dependence was interpreted as the effects of the geometrical relation in reciprocal space among the Ewald sphere, the reciprocal lattice vector, and the surface normal direction. To confirm the origin of the pattern formation, the topographic images were simulated in the framework of the kinematical diffraction theory. Based on the simulation, it was found that a granular pattern observed in the $\bar{1}\bar{1}5$ Bragg case was due to the divergence/convergence effect of X-rays diffracted from the undulated SOI layer.
- 2004-03-15
著者
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Department Of Applied Physics Faculty Of Engineering Osaka University
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Fukuda Kazunori
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Yoshida Takayoshi
Department Of Heaith And Sports Sciences Osaka University
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Umeno Masataka
Department of Management Science, Faculty of Engineering, Fukui University of Technology, 3-6-1 Gakuen, Fukui, Fukui 910-8585, Japan
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