Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
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概要
- 論文の詳細を見る
We systematically investigated the dependence of the effective work functions ($\Phi_{\text{eff}}$) for polycrystalline silicon (poly-Si) and fully silicided NiSi electrodes on Hf density at the electrode/dielectric interface in terms of Fermi level pinning (FLP). We found that the $\Phi_{\text{eff}}$ values agree with the values calculated using the interface gap states model with an extrinsic contribution, assuming that the interface gap state density is proportional to the product of Hf density in the dielectric and Si density in the electrode at the electrode/dielectric interface. On the basis of our results, we discuss the origins of FLP at the electrode/Hf-based dielectric interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-12-15
著者
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hase Takashi
System Devices Research Laboratories Nec Corporation
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Tatsumi Toru
System Devices And Fundamental Research Nec Corporation
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Manabe Kenzo
System Devices Research Laboratories Nec Corporation
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Hase Takashi
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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