Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
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概要
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The low-temperature growth of epitaxial Si films by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) was investigated. A 150 MHz very high frequency (VHF) power supply was used to generate an atmospheric pressure plasma of gas mixtures containing He, H2, and SiH4. Two types of electrode (i.e., cylindrical rotary and porous carbon electrodes) were used in plasma generation. When a cylindrical rotary electrode was used, polycrystalline Si growth was inevitable at the film edge on the upstream side. This is due to the variation in deposition rate along the gas flow direction, which is extremely high at the plasma/atmosphere interface on the upstream side. To solve this problem, we developed a novel porous carbon electrode where process gas molecules are directly supplied into the plasma region through a porous carbon plate a distance (0.8 mm) away from the substrate surface. Using such a porous carbon electrode, we successfully grew a defect-free epitaxial Si film on the entire surface of a 4 in. Si wafer at 600 °C. The average growth rate was 0.25–0.3 μm/min, which is as high as that obtained by thermal CVD at 900 °C. The epitaxial Si films grown at 600 °C were characterized by various methods, including transmission electron microscopy, atomic force microscopy, secondary ion mass spectrometry, and selective etching. The influence of adsorbed impurities in the porous carbon material on the quality of epitaxial Si films was also investigated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-30
著者
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kakiuchi Hiroaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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OHMI Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Wakamiya Takuya
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Tawara Naotaka
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Ohmi Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Shimura Takayoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kakiuchi Hiroaki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Wakamiya Takuya
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Tawara Naotaka
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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