Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport
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概要
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A purified Si film is prepared directly from metallurgical-grade (MG) Si by chemical transport using sub-atmospheric pressure H<sub>2</sub> plasma. The purification mechanism is based on the selective etching of Si using atomic H. It is demonstrated that the concentrations of most metal impurities (e.g., Fe, Cr, Ni, Ti, and Mn) in the prepared Si film are in the acceptable range for solar-grade Si material, or below the determination limit of the several impurity measuring methods employed in this study. From the infrared absorption measurements of the etching product produced by the reaction between H<sub>2</sub> plasma and MG-Si, it is found that the main etching product is SiH<sub>4</sub>. Therefore, a remote-type chemical transport process is developed to produce SiH<sub>4</sub> gas directly from MG-Si. Using other purifying principles (such as a pyrolysis filter in combination with this process), it is demonstrated that purified Si films about B, P and metal atoms can be produced from metallurgical-grade Si (${<}98$% purity).
- 2011-08-25
著者
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Kakiuchi Hiroaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Yamada Takahiro
Department Of Applied Chemistry School Of Engineering Tohoku University
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Yasutake Kiyoshi
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ohmi Hiromasa
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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