Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-10-30

著者

• KAKIUCHI Hiroaki

  Department of Precision Science and Technology, Osaka University

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• WATANABE Heiji

  Department of Precision Science and Technology, Osaka University

• Yasutake Kiyoshi

  Graduate School Of Engineering Osaka University

• SHIMURA Takayoshi

  Department of Material and Life Science, Graduate School of Engineering, Osaka University

• Kakiuchi Hiroaki

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Yasutake K

  Graduate School Of Engineering Osaka University

• OHMI Hiromasa

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• TAWARA Naotaka

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• WAKAMIYA Takuya

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

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