Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
-
FUKUDA Kazunori
Department of Oriental Medicine, Gifu University School of Medicine
-
YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
-
UMENO Masataka
Department of Precision Engineering, Faculty of Engineering, Osaka University
-
Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
-
SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
-
Yoshida Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
関連論文
- Anti-CD3 induces bi-phasic apoptosis in murine intestinal epithelial cells : possible involvement of the Fas/Fas ligand system in different T cell compartments
- Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
- Transport Properties of Heusler Compounds Fe_V_xAl(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Suppression by Flavonoids of Cyclooxygenase-2 Promoter-dependent Transcriptional Activity in Colon Cancer Cells: Structure-Activity Relationship
- Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
- Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
- Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
- Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon
- Surface Characterization of Carbon Fibers Exposed to 5 eV Energetic Atomic Oxygen Beam Studied by Wetting Force Measurements
- Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
- Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
- Transcriptional induction of Bcl-xL gene by glucocorticoids and a mineralcorticoid aldosterone in rat hepatoma cell line McA-RH8994
- Light Source System for Ruby Laser
- Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
- Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
- Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
- Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials)
- Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials)
- Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
- High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
- Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
- Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
- Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
- Fracture of GaAs Wafers : Mechanical and Acoustical Properties
- Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
- Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
- Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
- Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks
- Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-$k$ Gate Stacks
- Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping