Surface Characterization of Carbon Fibers Exposed to 5 eV Energetic Atomic Oxygen Beam Studied by Wetting Force Measurements
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-09-15
著者
-
TAGAWA Masahito
Department of Mechanical Engineering, Kobe University
-
GOTOH Keiko
Department of Biological Science and Technology, Faculty of Engineering, University of Tokushima
-
Ohmae Nobuo
Department of Mechanical Engineering, Faculty of Engineering, Kobe University
-
Umeno M
Fukui Univ. Technol. Fukui Jpn
-
Ohmae Nobuo
Department Of Mechanical Engineering Faculty Of Engineering Kobe University
-
Gotoh Keiko
Department Of Clothing Science Nara Women's University
-
Gotoh Keiko
Department Of Biological Science And Technology Faculty Of Engineering University Of Tokushima
-
UMENO Masataka
Department of Precision Engineering, Faculty of Engineering, Osaka University
-
Tagawa Masahito
Department Of Mechanical Engineering Faculty Of Engineering Kobe University
-
Umeno Masataka
Department Of Applied Physics Faculty Of Engineering Osaka University
-
YASUKAWA Akemi
Department of Clothing Science, Nara Women's University
-
TAGAWA Mieko
Department of Clothing Science, Nara Women's University
-
Yasukawa Akemi
Department Of Clothing Science Nara Women's University
関連論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Effects of Long-Term Irradiation with LEO Environment Effective Factors on Properties of Solid Lubricant
- Evaluation of Hypoxia-specific Cytotoxic Bioreductive Agent-sodium Borocaptate-^B Conjugates as ^B-carriers in Boron Neutron Capture Therapy
- Bonding of a Carbon Nanotube Film to a Au Film at Low Temperature and Contact Resistance of the Film under Micronewton Loads
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
- Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
- Synchrotron Radiation Photoelectron Emission Study of SiO_2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
- The Tribological Characteristics of Ni-Cr Cast Alloy at 1000 Degree C in Air
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
- Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
- Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
- Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon
- Surface Characterization of Carbon Fibers Exposed to 5 eV Energetic Atomic Oxygen Beam Studied by Wetting Force Measurements
- High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition
- High friction of a vertically aligned carbon-nanotube film in microtribology
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
- Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
- Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
- Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Light Source System for Ruby Laser
- Fracture of GaAs Wafers : Mechanical and Acoustical Properties
- Study on Near Dry Machining of Aluminum Alloys(Advanced Manufacturing Technology [I])
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- Synthesis and mechanical properties of carbon nanotube/diamond-like carbon composite films
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- Fabrication of Silicon Utilizing Mechanochemical Local Oxidation by Diamond Tip Sliding : Surfaces, Interfaces, and Films
- Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
- Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
- AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- Evaluatlon of Siliclde Morphology by Near-Infrared-Laser Optical-Beam-Induced-Current Technique : Optics and Quantum Electronics
- Detergency of Oily Contaminants as Assessed with a Quartz Crystal Microbalance and the Langmuir-Blodgett Method
- MOCVD Growth of InP Using Red-Phosphorus and Hydrogen Plasma
- Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Effect of the Soft X-rays on Highly Hydrogenated Diamond-Like Carbon Films
- Synchrotron Radiation Photoelectron Emission Study of SiO2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
- Frictional Properties of Carbon Nanotube Films with a Load Range from Micronewton to Millinewton Using mm Size Balls