SHIMURA Takayoshi | Department of Material and Life Science, Graduate School of Engineering, Osaka University
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概要
- Shimura Takayoshiの詳細を見る
- 同名の論文著者
- Department of Material and Life Science, Graduate School of Engineering, Osaka Universityの論文著者
関連著者
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
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UMENO Masataka
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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FUKUDA Kazunori
Department of Oriental Medicine, Gifu University School of Medicine
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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Yoshida Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Yasutake K
Graduate School Of Engineering Osaka University
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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YASUTAKE Kiyoshi
Graduate School of Engineering, Osaka University
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OHDOMARI Iwao
School of Science and Engineering, Waseda University
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大泊 巌
早稲田大学理工学術院
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Ohdomari Iwao
School Of Science And Engineering Waseda University:kagami-memorial Laboratory For Materials Science
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Ohdomari Iwao
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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WATANABE Heiji
Graduate School of Engineering, Osaka University
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IWAMOTO Hayato
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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KADOMURA Shingo
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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Umeno Masataka
Department Of Applied Physics Faculty Of Engineering Osaka University
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Fukuda Kazunori
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Yoshida Takayoshi
Department Of Health And Sport Sciences Graduate School Of Medicine Osaka University
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Hosoi Takuji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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WATANABE Takanobu
School of Science and Engineering, Waseda University
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TATSUMURA Kosuke
School of Science and Engineering, Waseda University
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YAMASAKI Daisuke
School of Science and Engineering, Waseda University
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Yoshimoto Chiaki
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kadomura Shingo
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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Iwamoto Hayato
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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SHIMURA Takayoshi
Graduate School of Engineering, Osaka University
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Yoshida Takayoshi
Department Of Heaith And Sports Sciences Osaka University
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ANDO Takashi
Department of Neurosurgery, Asahi University Murakami Memorial Hospital
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KUMIGASHIRA Hiroshi
Department of Physics,Tohoku University
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KAKIUCHI Hiroaki
Department of Precision Science and Technology, Osaka University
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IIDA Satoshi
Department of Physics,Kwansei-Gakuin University
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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OSHIMA Masaharu
Department of Engineering, University of Tokyo
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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Yasutake K
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kumigashira Hiroshi
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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HIRANO Tomoyuki
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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YOSHIDA Shinichi
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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TAI Kaori
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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YAMAGUCHI Shinpei
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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TOYODA Satoshi
Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo
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Umeno Masataka
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Umeno Masataka
Department Of Management Science Faculty Of Engineering Fukui University Of Technology
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Fukuda K
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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YAMADA Keisaku
Waseda Univ.
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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HOSOI Takuji
Department of Electronics and Information Systems, Osaka University
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Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Ando Takashi
Department Of Internal Medicine And Pathophysiology Nagoya City University Graduate School Of Medica
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NAKAMURA Kunio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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YOSHIDA Shiniti
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WATANABE Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Kakiuchi Hiroaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Yamamoto K
Kaneka Corporation
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Hashimoto Tatsuya
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hashimoto Tatsuya
Department Of Gastrointestinal Surgery Faculty Of Medicine Fukuoka University
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Toyoda Satoshi
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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IKUTA Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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MIYANAMI Yuki
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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FUJITA Shigeru
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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Miyanami Yuki
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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KUTSUKI Katsuhiro
Graduate School of Engineering, Osaka University
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OKAMOTO Gaku
Graduate School of Engineering, Osaka University
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HOSOI Takuji
Graduate School of Engineering, Osaka University
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OHMI Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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TAWARA Naotaka
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WAKAMIYA Takuya
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc. (selete)
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Okamoto Gaku
Graduate School Of Engineering Osaka University
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Hirano Tomoyuki
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Tai Kaori
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Ogiwara Shimpei
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kutsuki Katsuhiro
Graduate School Of Engineering Osaka University
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Ikuta Tetsuya
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Yamaguchi Shinpei
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Ando Takashi
Department Of Immunology Faculty Of Medicine University Of Yamanashi
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Fujita Shigeru
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Watanabe Yasumasa
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Ando Takashi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Ando Takashi
Department Of Applied Biological Chemistry Graduate School Of Agricultural And Life Sciences Univers
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Yoshida Shinichi
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc.
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Hashimoto Tatsuya
Department Of Gastroenterological Surgery Faculty Of Medicine Fukuoka University
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KUMIGASHIRA Hiroshi
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies, Inc.
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Yoshida Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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WATANABE Yasumasa
Department of Aeronautics and Astronautics, The University of Tokyo
著作論文
- Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
- Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
- Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth