WATANABE Heiji | Department of Precision Science and Technology, Osaka University

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著作論文

Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
High-resolution RBS analysis of Si-dielectrics interfaces
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics

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