HASE Takashi | System Devices Research Laboratories, NEC Corporation

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概要

• 同名の論文著者
• System Devices Research Laboratories, NEC Corporationの論文著者

関連著者

• TATSUMI Toru

  System Devices Research Laboratories, NEC Corporation

• Manabe Katsuya

  System Devices Research Laboratories Nec Corporation

• MANABE Kenzo

  System Devices Research Laboratories, NEC Corporation

• HASE Takashi

  System Devices Research Laboratories, NEC Corporation

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• WATANABE Heiji

  Department of Precision Science and Technology, Osaka University

• WATANABE Hirohito

  System Devices Research Laboratories, NEC Corporation

• IKARASHI Nobuyuki

  System Devices Research Laboratories, NEC Corporation

• WATANABE Heiji

  System Devices Research Laboratories, NEC Corporation

• Tatsumi Toru

  System Devices Research Laboratories Nec Corporation

• Watanabe Heiji

  System Devices Research Laboratories Nec Corporation

• TAKAHASHI Kensuke

  System Devices Research Laboratories, NEC Corporation

• OSHIDA Makiko

  System Devices Research Laboratories, NEC Corporation

• Hase Takashi

  System Devices Research Laboratories Nec Corporation

• Oshida Makiko

  System Devices Research Laboratories Nec Corporation

• IKARASHI Nobuyuki

  NEC Corporation, Device Platforms Research Laboratories

• Takahashi Kensuke

  System Devices Research Laboratories Nec Corporation

• Tatsumi Toru

  System Devices And Fundamental Research Nec Corporation

• Ikarashi N

  Nec Corporation Device Platforms Research Laboratories

• Ikarashi Nobuyuki

  System Devices Research Laboratories Nec Corporation

• Manabe Kenzo

  System Devices Research Laboratories Nec Corporation

• Watanabe Hirohito

  System Devices Research Laboratories Nec Corp.

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著作論文

• Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
• Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks

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