Manabe Katsuya | System Devices Research Laboratories Nec Corporation

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著作論文

Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(High-κ Gate Dielectrics)
Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application
Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks (Special Issue: Solid State Devices & Materials)
Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks
Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
A 3-D Boundary Element Analysis of EM Wave Scattering by a Perfectly Conducting Body with Edges and Corners
Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method

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