Manabe Kenzo | System Devices Research Laboratories Nec Corporation

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著作論文

High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application
Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks
Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface

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