Hase Takashi | System Devices Research Laboratories Nec Corporation

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概要

• HASE Takashiの詳細を見る
• 同名の論文著者
• System Devices Research Laboratories Nec Corporationの論文著者

関連著者

• Hase Takashi

  System Devices Research Laboratories Nec Corporation

• Tatsumi Toru

  System Devices And Fundamental Research Nec Corporation

• Manabe Kenzo

  System Devices Research Laboratories Nec Corporation

• Yasutake Kiyoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Oshida Makiko

  System Devices Research Laboratories Nec Corporation

• Takahashi Kensuke

  System Devices Research Laboratories Nec Corporation

• Ikarashi Nobuyuki

  System Devices Research Laboratories Nec Corporation

• Watanabe Hirohito

  System Devices Research Laboratories Nec Corp.

• Hase Takashi

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• WATANABE Hirohito

  System Devices Research Laboratories, NEC Corporation

• IKARASHI Nobuyuki

  System Devices Research Laboratories, NEC Corporation

• WATANABE Heiji

  System Devices Research Laboratories, NEC Corporation

• TATSUMI Toru

  System Devices Research Laboratories, NEC Corporation

• Tatsumi Toru

  System Devices Research Laboratories Nec Corporation

• Watanabe Heiji

  System Devices Research Laboratories Nec Corporation

• Manabe Katsuya

  System Devices Research Laboratories Nec Corporation

• TAKAHASHI Kensuke

  System Devices Research Laboratories, NEC Corporation

• MANABE Kenzo

  System Devices Research Laboratories, NEC Corporation

• HASE Takashi

  System Devices Research Laboratories, NEC Corporation

• OSHIDA Makiko

  System Devices Research Laboratories, NEC Corporation

• IKARASHI Nobuyuki

  NEC Corporation, Device Platforms Research Laboratories

• Ikarashi N

  Nec Corporation Device Platforms Research Laboratories

• Oshida Makiko

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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著作論文

• Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks
• Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
• Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
• Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface

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