Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
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WATANABE Hirohito
System Devices Research Laboratories, NEC Corporation
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IKARASHI Nobuyuki
System Devices Research Laboratories, NEC Corporation
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WATANABE Heiji
System Devices Research Laboratories, NEC Corporation
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TATSUMI Toru
System Devices Research Laboratories, NEC Corporation
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Tatsumi Toru
System Devices Research Laboratories Nec Corporation
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Watanabe Heiji
System Devices Research Laboratories Nec Corporation
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Manabe Katsuya
System Devices Research Laboratories Nec Corporation
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TAKAHASHI Kensuke
System Devices Research Laboratories, NEC Corporation
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MANABE Kenzo
System Devices Research Laboratories, NEC Corporation
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HASE Takashi
System Devices Research Laboratories, NEC Corporation
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OSHIDA Makiko
System Devices Research Laboratories, NEC Corporation
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Hase Takashi
System Devices Research Laboratories Nec Corporation
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Oshida Makiko
System Devices Research Laboratories Nec Corporation
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IKARASHI Nobuyuki
NEC Corporation, Device Platforms Research Laboratories
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Takahashi Kensuke
System Devices Research Laboratories Nec Corporation
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Tatsumi Toru
System Devices And Fundamental Research Nec Corporation
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Ikarashi N
Nec Corporation Device Platforms Research Laboratories
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Ikarashi Nobuyuki
System Devices Research Laboratories Nec Corporation
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Manabe Kenzo
System Devices Research Laboratories Nec Corporation
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Watanabe Hirohito
System Devices Research Laboratories Nec Corp.
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