Uniform Raised-Salicide Technology for High-Performance CMOS Devices(Special Issue on Advanced Sub-0.1μm CMOS Devices)
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概要
- 論文の詳細を見る
A uniform raised-salicide technology has been investigated using both uniform selective-epitaxial-growth (SEG) silicon and salicide films, to reduce a junction leakage current of shallow source/drain (S/D) regions for high-performance CMOS devices. The uniform SEG-Si film without pits is formed by using a wet process, which is a carbon-free oxide removal only using a dilute hydrofluoric acid (DHF) dipping, prior to the Si-SEG process. After a titanium-salicide formation using a conventional two-step salicide process, this uniform SEC-Si film achieves good S/D junction characteristics. The uniform titanium-salicide film without bowing into a silicon is formed by a smaller Ti/SEC-Si thickness ratio, which results in a low sheet resistance of 5Ω/sq. without a narrow-line effect. Furthermore, the drive current is maximized by this raised-salicide film using a Ti/SEG-Si thickness ratio of 1.0.
- 社団法人電子情報通信学会の論文
- 2002-05-01
著者
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TATSUMI Toru
System Devices Research Laboratories, NEC Corporation
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TATSUMI Toru
Silicon Systems Research Laboratories, NEC Corporation
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MOGAMI Tohru
Silicon Systems Research Laboratories, NEC Corporation
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Tatsumi Toru
System Devices Research Laboratories Nec Corporation
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Tatsumi Toru
Silicon Systems Research Laboratories Nec Corporation
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Mogami T
Silicon Systems Research Laboratories Nec Corporation
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Mogami T
Nec Corp. Sagamihara‐shi Jpn
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Mogami Tohru
Silicon Systems Research Laboratories Nec Corporation
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Andoh Takeshi
System Lsi Division Nec Corporation
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KUNIO Takemitsu
Silicon Systems Research Laboratories, NEC Corporation
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WAKABAYASHI Hitoshi
Silicon Systems Research Laboratories, NEC Corporation
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Kunio T
Silicon Systems Research Laboratories Nec Corporation
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Wakabayashi Hitoshi
Silicon Systems Research Laboratories Nec Corporation
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Wakabayashi Hitoshi
Silicon Systems Research Labs.
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