Metal Organic Atomic Layer Deposition of High-$k$ Gate Dielectrics Using Plasma Oxidation
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概要
- 論文の詳細を見る
We have investigated an atomic layer deposition (ALD) of ZrO2 or HfO2 by using a metal-organic (MO) precursor. As MO precursors are very sensitive to H2O and have much carbon content, we used oxygen plasma instead of H2O in order to suppress the background reaction with H2O and reduce carbon contamination. As a result, we achieved an ALD proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
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Endo Kazuhiko
Silicon Systems Research Laboratories Nec Corporation
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Tatsumi Toru
Silicon Systems Research Laboratories Nec Corporation
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Tatsumi T
Nec Corp. Kanagawa Jpn
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