Controlling Fluorine Concentration of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics
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概要
- 論文の詳細を見る
Control of the fluorine to carbon (F/C) ratio of fluorinated amorphous carbon (a-C:F) thin films by changing the deposition pressure is investigated. Decreasing the deposition pressure increases the dissociation of the source fluorocarbon material in the plasma, causing a decrease in the F/C ratio of the deposited film. There is a tradeoff relationship between the dielectric constant and the thermal stability. Both the thermal stability and the dielectric constant of the a-C:F films are increased as the F/C retio is decreased. Thus, the tradeoff relationship between them can be optimized by the pressure during deposition.
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Endo Kazuhiko
Silicon Systems Research Laboratories Nec Corporation
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Tatsumi Toru
Silicon Systems Research Laboratories Nec Corporation
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