Ultra-Uniform CMP Using a Hydro Film Buffered Chuck (Hydro Chuck)
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
-
林 喜宏
日本電気(株)マイクロエレクトロ二クス研究所
-
KUNIO Takemitsu
Microelectronics Research Laboratories, NEC Corporation
-
Hayashi Y
Irie Koken Co. Ltd.
-
Kunio T
Silicon Systems Research Laboratories Nec Corporation
-
HAYASHI Yoshihiro
Microelectronics Research Laboratories, NEC
-
NAKAJIMA Tsutomu
Microelectronics Research Laboratories, NEC
-
Nakajima Tsutomu
Microelectronics Research Laboratories Nec
-
Kunio Takemitsu
Microelectronics Research Laboratories Nec
-
Hayashi Yoshihiro
Microelectronics Research Laboratories Nec Corporation
-
Hayashi Yoshihiro
Device Platforms Research Labs. Nec Corporation
-
Hayashi Yoshihiro
Ulsi Res. Lab Silicon Systems Res. Labs. Nec
-
Hayashi Yoshihiro
Microelectronics Research Laboratories Nec
関連論文
- Alダマシンプロセスによる多層配線形成
- 科学的機械研磨による層間膜平坦化技術
- 溝側壁注入により逆狭チャネル効果を抑制した0.2μmSTI技術
- Impact of Barrier Metal Sputtering on Low-k SiOCH Films with Various Chemical Structures
- Nitride-Masked Polishing (NMP) Technique for Surface Planarization of Interlayer-Dielectric Films
- Quarter-Micron Interconnection Technologies for 256-Mbit Dynamic Random Access Memories
- A Small Area, 3-Dimensional On-chip Inductors for High-speed Signal Processing under Low Power Supply Voltages
- Characteristics of 0.25 μm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O_3 Capacitor on a Metal/Via-Stacked Plug
- 0.25μm FeRAM with CMVP (Capacitor-on-Metal/Via-Stacked-Plug) Memory Cell
- 0.15μm CMOS Devices with Reduced Junction Capacitance
- Compact Electron Cyclotron Resonance Plasma Source Optimization for Ion Bearm Applications
- TiN as a Phosphorus Outdiffusion Barrier Layer for WSi_x/Doped-Polysilicon Structures (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Uniform Raised-Salicide Technology for High-Performance CMOS Devices(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices
- Low-Voltage Switching Characteristics of SrBi_2Ta_2O_9 Capacitors
- Ultra-Uniform CMP Using a Hydro Film Buffered Chuck (Hydro Chuck)
- Ammonium-Salt-Added Silica Slurry for the Chemical Mechanical Polishing of the Interlayer Dielectric Film Planarization in ULSI's
- Effect of Thermal Data-Imprint on 2T/2C FeRAM Cell Operation
- 7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
- Materials and Process Designs for FeRAM-embeded VLSI Devices
- Ultrauniform Chemical Mechanical Polishing (CMP) Using a "Hydro Chuck", Featured by Wafer Mounting on a Quartz Glass Plate with Fully Flat, Water-Supported Surface