Low-Voltage Switching Characteristics of SrBi_2Ta_2O_9 Capacitors

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概要

• 論文の詳細を見る

• Ferroelectric capacitor arrays were fabricated using SrBi_2Ta_2O_9 (SBT) thin films. Hysteresis and pulse response were measured as functions of capacitor size and applied voltage. The remanent polarization (P_r) at 5 V does not depend on capacitor size, though P_r at low applied voltage decreases considerably as capacitor size decreases below 10 μm. High-voltage pulse application enhances low-voltage polarization switching. Retention characteristics strongly depend on operating voltage. Switching charge at 2 V or above is stable up to 10^4 s retention, while that at 1 V operation decrease with increasing retention time.

• 社団法人応用物理学会の論文
• 1996-09-30

著者

• KUNIO Takemitsu

  Microelectronics Research Laboratories, NEC Corporation

• Amanuma Kazushi

  Microelectronics Research Laboratories Nec Corporation

• Kunio Takemitsu

  Microelectronics Research Laboratories Nec

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