Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method

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概要

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• We have developed a novel nickel self-aligned silicide (salicide) process for future scaled metal-oxide-semiconductor field-effect transistors (MOS-FETs). Ni/Si multi-layered structures were fabricated by the cyclic deposition of Ni and Si. Nickel monosilicide (NiSi) films with a low resistivity, a uniform thickness, and a good morphology were obtained on Si(100) substrates after annealing at 400–600°C. Nickel silicide formed on SiO2 can be removed by wet etching if the total atomic number ratio of Ni to Si in the deposited layers is larger than unity. This shows that the nickel salicide process is possible by our method. We have fabricated MOS-FET structures with NiSi and confirmed that the consumption of Si in the substrate is much lower in our method than in the conventional method.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• IKARASHI Nobuyuki

  System Devices Research Laboratories, NEC Corporation

• Yoshihara Takuya

  System Devices Research Laboratories Nec Corporation

• Miura Yoshinao

  System Devices Research Laboratories Nec Corporation

• Manabe Katsuya

  System Devices Research Laboratories Nec Corporation

• WAKABAYASHI Hitoshi

  System Devices and Fundamental Research, NEC Corporation

• Tanaka Masayasu

  System Devices Research Laboratories Nec Corporation

• MANABE Kenzo

  System Devices Research Laboratories, NEC Corporation

• TERASHIMA Koichi

  System Devices Research Laboratories, NEC Corporation

• OSHIDA Makiko

  R&D Support Center, NEC Corporation

• Wakabayashi Hitoshi

  System Devices Research Laboratories Nec Corporation

• Wakabayashi Hitoshi

  System Devices And Fundamental Research Nec Corporation

• Oshida Makiko

  System Devices Research Laboratories Nec Corporation

• Terashima Koichi

  System Devices Research Laboratories Nec Corporation

• Ikarashi N

  Nec Corporation Device Platforms Research Laboratories

• Ikarashi Nobuyuki

  System Devices Research Laboratories Nec Corporation

• Manabe Kenzo

  System Devices Research Laboratories Nec Corporation

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• Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
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