Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
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概要
- 論文の詳細を見る
The fully silicided (FUSI)-nickel monosilicide (NiSi) metal gate electrode on the HfSiON gate dielectric has been investigated for low-power metal-oxide-semiconductor field effect transistors (MOSFETs). We found that the FUSI-NiSi electrode on the HfSiON dielectric has a work function of 4.55 eV, which improved the threshold voltage shift of PMOSFETs by 0.15 V compared with that of the poly-Si/HfSiON MOSFETs. At the same time, full silicidation eliminated the gate depletion and thereby we achieved the capacitance equivalent thickness at inversion of 2.1 nm and a five-order-of-magnitude reduction in the gate leakage current compared with the poly-Si/SiO2 devices. Moreover, we obtained an excellent carrier mobility for the FUSI-NiSi/HfSiON transistors (PMOS: 100%, NMOS: 90% compared with the poly-Si/SiO2 reference transistors). These results show that the FUSI-NiSi/HfSiON gate stack is a promising candidate for next-generation low-power MOSFETs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Yoshihara Takuya
System Devices Research Laboratories Nec Corporation
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Morioka Ayuka
System Devices Research Laboratories Nec Corporation
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Ikarashi Taeko
System Devices Research Laboratories Nec Corporation
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Watanabe Heiji
System Devices Research Laboratories Nec Corporation
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Takahashi Kensuke
System Devices Research Laboratories Nec Corporation
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Tatsumi Toru
System Devices And Fundamental Research Nec Corporation
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Manabe Kenzo
System Devices Research Laboratories Nec Corporation
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Takahashi Kensuke
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Manabe Kenzo
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ikarashi Taeko
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
関連論文
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