Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks
スポンサーリンク
概要
- 論文の詳細を見る
We characterized how positive and negative bias temperature instabilities (PBTI and NBTI) occur in HfSiON gate stacks. The PBTI was confirmed to be suppressed by using amorphous ($a$-) HfSiON instead of crystallized ($c$-) HfSiON. The $a$-HfSiON reduced the capture cross-section and lowered the density of electron traps, which explains the suppression of the PBTI. The different trap parameters for $a$-HfSiON and $c$-HfSiON suggest that the electron traps of these structures have different origins. The PBTI of $a$-HfSiON gates occurred through electron trapping without generation of interface traps, while the NBTI of $a$-HfSiON gates occurred through generation of interface traps and positive oxide charges. Furthermore, it was found that the NBTI of $a$-HfSiON gates also involves electron trapping. Additionally, the subthreshold slope decreased under positive BT stress. We attribute these characteristic BTI behaviors of HfSiON gates to the influence of charge traps that are present within the HfSiON bulk.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Terai Masayuki
System Devices Research Laboratories Nec Corp.
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SAITOH Motofumi
System Devices Research Laboratories, NEC Corporation
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Morioka Ayuka
System Devices Research Laboratories Nec Corporation
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Kotsuji Setsu
System Devices Research Laboratories Nec Corporation
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Fujieda Shinji
System Devices Research Laboratories Nec Corp.
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Terai Masayuki
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Morioka Ayuka
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kotsuji Setsu
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Fujieda Shinji
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Saitoh Motofumi
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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