Influences of Traps within HfSiON Bulk on Positive- and Negative-Bias Temperature Instability of HfSiON Gate Stacks

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• 寺井 真之

  早稲田大学

• 寺井 真之

  日本電気株式会社デバイスプラットフォーム研究所

• Terai Masayuki

  System Devices Research Laboratories Nec Corp.

• FUJIEDA Shinji

  System Devices Research Laboratories, NEC Corporation

• MORIOKA Ayuka

  System Devices Research Laboratories, NEC Corporation

• KOTSUJI Setsu

  System Devices Research Laboratories, NEC Corporation

• SAITOH Motofumi

  System Devices Research Laboratories, NEC Corporation

• Morioka Ayuka

  System Devices Research Laboratories Nec Corporation

• Kotsuji Setsu

  System Devices Research Laboratories Nec Corporation

• Fujieda Shinji

  System Devices Research Laboratories Nec Corp.

• Terai Masayuki

  Department Of Applied Physics Waseda University

• SAITOH Motofumi

  NEC Corporation, Device Platforms Research Laboratories

• Saitoh Motofumi

  Nec Corporation Device Platforms Research Laboratories

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• Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks
• Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
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