Atomic Structural Analysis of a Monolayer Epitaxial Film of Hexagonal Boron Nitride/Ni(111) studied by LEED Intensity Analysis(Interfaces by various techniques)

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概要

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• The atomic structure of a monolayer epitaxial film of hexagonal boron nitride (h-BN) formed on a Ni(111) surface was investigated by means of LEED intensity analysis. We measured the I-V curves of the (1, 0), (0, 1) and (1, 1) diffraction spots from a 1×1 atomic structure, and analyzed them by using Van Hove's analytical program based on dynamical theory. Six different atomic structural models meeting the experimental requirement of the 3-m symmetry were evaluated with Pendry's reliability factor. The final best-fit structure characterized by the minimum Pendry's reliability factor of 0.27 is as follows; the nitrogen atom in a unit cell of the h-BN overlayer is located at the on-top site of the topmost Ni atoms, while the boron atom exists at the fcc-hollow site. The spacings between the nitrogen (boron) atom and the topmost Ni layer is 2.04Å(2.2Å), which is much narrower than the interlayer spacing in bulk h-BN (3.33Å).h-BNLEED analysisepitaxial filmrumpling structuremonolayer

• 東北大学の論文
• 1997-03-31

著者

• 寺井 真之

  早稲田大学

• 寺井 真之

  日本電気株式会社デバイスプラットフォーム研究所

• OSHIMA Chuhei

  Department of Applied Physics, Waseda University

• Oshima Chuhei

  Department Of Applied Physics Waseda University

• Terai Masayuki

  Department Of Informatics Osaka Gakuin University

• Terai Masayuki

  Department Of Applied Physics Waseda University

• Gamou Yasuo

  Department of Applied Physics, Waseda University

• Nagashima Ayato

  Department of Physics, Tokyo Institute of Technology

• Gamou Yasuo

  Department Of Applied Physics Waseda University

• Nagashima Ayato

  Department Of Physics Tokyo Institute Of Technology

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