Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
The mechanisms of gate leakage current and that of time dependent dielectric breakdown (TDDB) failure of HfSiON/SiO2 gate dielectrics having an equivalent oxide thickness of 1.6 nm were investigated. The leakage current mechanism was found to be different for low and high electric fields, which we attribute to the difference in barrier height between interfacial SiO2 and HfSiON. The mechanism of TDDB also proved to be different for low and high electric fields. Accordingly, TDDB lifetime must be evaluated in the low-gate-bias region, where the leakage current mechanism is the same as that of the actual FET operating voltages. A system for detecting defect generation using an emission microscope was developed, enabling low-bias TDDB measurements of large-gate-area transistors. Through this investigation, it was predicted that HfSiON/SiO2 has much more than 10 years' TDDB reliability.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Terai Masayuki
System Devices Research Laboratories Nec Corp.
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IWAMOTO Toshiyuki
System Devices Research Laboratories, NEC Corporation
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SAITOH Motofumi
System Devices Research Laboratories, NEC Corporation
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Yabe Yuko
System Devices Research Laboratories Nec Corp.
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Morioka Ayuka
System Devices Research Laboratories Nec Corporation
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Kotsuji Setsu
System Devices Research Laboratories Nec Corporation
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Fujieda Shinji
System Devices Research Laboratories Nec Corp.
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Ogura Takashi
System Devices And Fundamental Research Nec Corporation
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Saito Yukishige
System Devices Research Laboratories Nec Corp.
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Watanabe Hirohito
System Devices Research Laboratories Nec Corp.
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Saito Yukishige
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Yabe Yuko
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Watanabe Hirohito
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Fujieda Shinji
System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
関連論文
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- 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
- Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs
- Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks
- Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
- Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks