Fujieda Shinji | System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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概要

• Fujieda Shinjiの詳細を見る
• 同名の論文著者
• System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者

関連著者

• Terai Masayuki

  System Devices Research Laboratories Nec Corp.

• SAITOH Motofumi

  System Devices Research Laboratories, NEC Corporation

• Morioka Ayuka

  System Devices Research Laboratories Nec Corporation

• Kotsuji Setsu

  System Devices Research Laboratories Nec Corporation

• Fujieda Shinji

  System Devices Research Laboratories Nec Corp.

• Fujieda Shinji

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• IWAMOTO Toshiyuki

  System Devices Research Laboratories, NEC Corporation

• Yabe Yuko

  System Devices Research Laboratories Nec Corp.

• Ogura Takashi

  System Devices And Fundamental Research Nec Corporation

• Saito Yukishige

  System Devices Research Laboratories Nec Corp.

• Watanabe Hirohito

  System Devices Research Laboratories Nec Corp.

• Terai Masayuki

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Morioka Ayuka

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Saito Yukishige

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Yabe Yuko

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kotsuji Setsu

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Watanabe Hirohito

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Saitoh Motofumi

  System Devices Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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著作論文

• Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs
• Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks

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