Yasutake Kiyoshi | Graduate School Of Engineering Osaka University

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著作論文

White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials)
Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials)
Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
Fracture of GaAs Wafers : Mechanical and Acoustical Properties
Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks
Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-$k$ Gate Stacks
Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping

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