Ikuta Tetsuya | Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
スポンサーリンク
概要
- Ikuta Tetsuyaの詳細を見る
- 同名の論文著者
- Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japanの論文著者
関連著者
-
Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
-
Kadomura Shingo
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
-
Watanabe Heiji
Graduate School Of Engineering Osaka University
-
Iwamoto Hayato
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
-
Ikuta Tetsuya
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
-
Shimura Takayoshi
Graduate School Of Engineering Osaka University
-
Fujita Shigeru
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
-
Shimura Takayoshi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Yasutake Kiyoshi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Fujita Shigeru
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
-
Ikuta Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
著作論文
- Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping