Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-10-30

著者

• KAKIUCHI Hiroaki

  Department of Precision Science and Technology, Osaka University

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• Yasutake Kiyoshi

  Graduate School Of Engineering Osaka University

• Kakiuchi Hiroaki

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• OHMI Hiromasa

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• NAKAMURA Ryota

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• AKETA Masatoshi

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

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• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
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