SiO2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power
スポンサーリンク
概要
- 論文の詳細を見る
Silicon oxide (SiO2) layers were fabricated at a low temperature of 400 °C by the oxidation of single-crystal Si substrates and hydrogenated amorphous Si (a-Si:H) films using stable plasma excited at atmospheric pressure with a 150 MHz very high frequency (VHF) power. The utilization of Ar/O2 plasma led to an oxidation rate higher than that using He/O2 plasma while maintaining both SiO2/Si interface and SiO2 bulk qualities. The oxidation of a-Si:H was also effective in increasing the oxidation rate than the oxidation of single-crystal Si. Although the a-Si:H film contained a large amount of H atoms bound to Si atoms, the atmospheric-pressure VHF plasma significantly induced the hydrogen evolution from the film and the transformation of the film into a SiO2 layer. As a result, this study showed that the utilization of atmospheric-pressure VHF plasma was beneficial to the realization of a highly efficient formation process of stoichiometric and pure SiO2 layers at low temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
-
Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
Kakiuchi Hiroaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
-
Harada Makoto
Department Of Chemistry Tokyo Institute Of Technology
-
Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
OHMI Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
Kakiuchi Hiroaki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Watanabe Heiji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Yasutake Kiyoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Ohmi Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Harada Makoto
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
HARADA MAKOTO
Department of Chemical Engineering, Kyoto University
関連論文
- Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- High-resolution RBS analysis of Si-dielectrics interfaces
- Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Atomic XAFS for a Bromide Ion Bound on Anion-Exchange Resin in Water
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
- Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
- Electrophoretic Levitation and Focusing of Particles by Field Switching
- Hydration of Ions in Confined Spaces and Ion Recognition Selectivity
- Prostaglandin production in cirrhosis and portal hypertension-Experimental and clinical study
- Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
- Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
- Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
- Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials)
- Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials)
- Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
- High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
- Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
- Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
- Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
- Fracture of GaAs Wafers : Mechanical and Acoustical Properties
- Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
- Simultaneous Observation of Millisecond Dynamics in Atomistic Structure, Force and Conductance on the Basis of Transmission Electron Microscopy : Surface, Interfaces, and Films
- Fabrication of Silicon Utilizing Mechanochemical Local Oxidation by Diamond Tip Sliding : Surfaces, Interfaces, and Films
- Order-Enhancing Processing in Self-Assembly
- Probing Depth Study of Conversion Electron/He Ion Yield XAFS Spectroscopy on Strontium Titanate Thin Films
- Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
- Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport
- Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
- Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
- Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System
- Solute Distribution Coupled with Laminar Flow in Wide-Bore Capillaries : What Can Be Separated without Chemical or Physical Fields?
- X-ray Absorption Spectroscopy of Ions Attracted by Langmuir Membranes at Controlled Surface Pressures
- Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
- Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition
- Charge Neutralization Using Focused 500 eV Electron Beam in Focused Ion Beam System
- Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Wide-Bore Capillary Hydrodynamic Chromatography with ICP-MS Detection for Evaluation of Lanthanide Uptake by Molecular Aggregates
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
- Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma
- Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
- La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
- Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
- Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor
- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure
- Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
- Structural Characterization of Polycrystalline 3C–SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
- Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition
- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
- Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
- Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode
- Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture
- SiO2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power
- Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
- Mechanism and kinetics of palladium extraction with .BETA.-hydroxyoxime.
- THE ROLE OF POLYMER PARTICLES IN THE EMULSION POLYMERIZATION OF VINYL ACETATE
- STUDIES OF THE EFFECT OF POLYMER PARTICLES ON EMULSION POLYMERIZATION