Yasutake K | Osaka Univ. Osaka
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概要
関連著者
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Yasutake K
Osaka Univ. Osaka
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Yasutake K
Graduate School Of Engineering Osaka University
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YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
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Kakiuchi Hiroaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Kawabe H
Osaka Polytechnic College
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OHMI Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Ohmi Hajime
School Of Engineering Nagoya University
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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UMENO Masataka
Department of Precision Engineering, Faculty of Engineering, Osaka University
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KAWABE Hideaki
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Kawabe H
Tatsuta Electric Wire & Cable Co. Ltd. Osaka
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Kawabe Hideaki
Department Of Applied Physics Faculty Of Engineering Osaka University
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Umeno Masataka
Department Of Applied Physics Faculty Of Engineering Osaka University
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KAKIUCHI Hiroaki
Department of Precision Science and Technology, Osaka University
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YOSHII Kumayasu
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Mori Yuzo
Osaka University Dept. Of Precision Science And Technology Graduate School Of Eng.
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MORI Yuzo
Department of Precision Science and Technology, Osaka University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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NISHINO Taneo
Department of Electrical and Electronics Engineering, Kobe University
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NISHINO Taneo
Institute of Natural Science, Kobe University
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NAKAYAMA Hiroshi
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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Watanabe Heiji
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Kobe University
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nishino Taneo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Mori Yuzo
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Nishino T
Kobe Univ. Kobe Jpn
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Nakayama Hiroshi
Department Of Electrical Engineering Faculty Of Engineering Himeji Institute Of Technology
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nakayama Hiroshi
Department of Applied Physics, Osaka City University, Osaka 558-8585
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Yasutake Kiyoshi
Osaka Univ. Osaka Jpn
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OHMI Hiromasa
Osaka University, Dept. of Precision Science and Technology, Graduate School of Eng.
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KAKIUCHI Hiroaki
Osaka University, Dept. of Precision Science and Technology, Graduate School of Eng.
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EBATA Yusuke
SHARP Co., Ltd.
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Ebata Yusuke
Sharp Corporation Production Technology Development Center
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Kawabe Hideaki
Osaka Polytechnic College
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TAKEUCHI AKIHIRO
Graduate School of Medical Sciences, Kitasato University
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ADACHI Kaoru
Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University
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Terai Yoshikazu
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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TAWARA Naotaka
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WAKAMIYA Takuya
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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FUJIWARA Yasufumi
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
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HAMAOKA Yoshinori
Osaka University, Dept. of Precision Science and Technology, Graduate School of Eng.
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KUWAHARA Yasuhito
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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MATSUMOTO Mitsuhiro
SANYO Electric Co., Ltd.
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NAKAHAMA Yasuji
SHARP Corporation, Production technology development center
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YOSHII Kumayasu
Osaka University, Dept. of Precision Science and Technology, Graduate School of Eng.
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MORI Yuzo
Osaka University, Dept. of Precision Science and Technology, Graduate School of Eng.
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KAKIUCHI Hiroaki
Graduate School of Engineering, Osaka University
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OKUYAMA Yoshimasa
JT Inc
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YOSHII Kumayasu
Graduate School of Engineering, Osaka University
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KONISHI Yoshito
Department of Precision Engineering, faculty of Engineering, Osaka University
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Wakamiya Takuya
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Adachi Kaoru
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Adachi Kaoru
Department Of Precision Engineering Faculty Of Engineering Osaka University
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MURAKAMI Junichi
Department of Electrontcs and Informatics, Faculty of Engineering, Toyama Prefectural University
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Nakahama Yasuji
Sharp Corporation Production Technology Development Center
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Hamaoka Yoshinori
Osaka University Dept. Of Precision Science And Technology Graduate School Of Eng.
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Kuwahara Yasuhito
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Murakami Junichi
Department Of Electrontcs And Informatics Faculty Of Engineering Toyama Prefectural University
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Murakami Junichi
Department Of Precision Engineering Faculty Of Engineering Osaka Unviersity
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Tawara Naotaka
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Takeuchi Akihiro
Graduate School Of Engineering Osaka University
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Matsumoto Mitsuhiro
Sanyo Electric Co. Ltd.
著作論文
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
- Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
- High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
- Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
- Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
- Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
- Fracture of GaAs Wafers : Mechanical and Acoustical Properties
- Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range