SHIRAISHI Kenji | Univ. of Tsukuba
スポンサーリンク
概要
関連著者
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Shiraishi K
Institute Of Physics University Of Tsukuba
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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YAMABE Kikuo
Univ. of Tsukuba
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SHIRAISHI Kenji
Univ. of Tsukuba
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YAMADA Keisaku
Waseda Univ.
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Yamamoto K
Univ. Of Tsukuba
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Yamamoto K
Kaneka Corporation
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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MIYAZAKI Seiichi
Hiroshima University
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Zhao Ming
Department of Oral Pathology, Faculty of Dentistry, Hiroshima University
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SUZUKI Motofumi
Department of Global Agricultural Sciences, Graduate School of Agricultural and Life Sciences
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Kimura Kenji
Department of Engineering Science, Kyoto University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Kimura Kenji
Dep. Of Micro Engineering Kyoto Univ.
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NAKAJIMA Kaoru
Department of Micro Engineering, Kyoto University
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UEMATSU Masashi
NTT Basic Research Laboratories, NTT Corporation
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KAMIYAMA Satoshi
Semiconductor Leading Edge Technologies, Inc.
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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SATO Motoyuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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TAMURA Chihiro
Univ. of Tsukuba
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HASUNUMA Ryu
Univ. of Tsukuba
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AOYAMA Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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OHJI Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kimura Kenji
Department Of Micro Engineering Kyoto University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Nakamura Kunio
Department Of Micro Engineering Kyoto University
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Ohji Yuzuru
Semiconductor Leading Edge Technol. Inc. (selete) Ibaraki Jpn
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Zhao Ming
Department Of Micro Engineering Kyoto University
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Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
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Uematsu Masashi
Ntt Basic Research Laboratories
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Suzuki Motofumi
Department Of Micro Engineering Kyoto University
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Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
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Yamada Keisaku
Univ. Of Tsukuba
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Zhao Ming
Department Of Dermatology Epigenetic Research Center Second Xiangya Hospital Central South Universit
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Uematsu Masashi
Ntt Basic Research Laboratories Ntt Corporation
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
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Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Suzuki Motofumi
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
著作論文
- High-resolution RBS analysis of Si-dielectrics interfaces
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm