Aoyama Takayuki | Semiconductor Leading Edge Technologies Inc.
スポンサーリンク
概要
関連著者
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
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Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Miyazaki Seiichi
Hiroshima Univ.
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YAMADA Keisaku
Waseda Univ.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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AOYAMA Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Ohji Yuzuru
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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MIYAZAKI Seiichi
Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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SATO Motoyuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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OHJI Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Ohji Yuzuru
Semiconductor Leading Edge Technol. Inc. (selete) Ibaraki Jpn
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Yamada Keisaku
Univ. Of Tsukuba
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Onizawa Takashi
Semiconductor Leading Edge Technologies Inc.
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Hasunuma Ryu
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0821, Japan
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Tamura Chihiro
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
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Yamabe Kikuo
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
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Shiraishi Kenji
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
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Yamabe Kikuo
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0821, Japan
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Kadoshima Masaru
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Aminaka Toshio
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kurosawa Etsuo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kurosawa Etsuo
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Aminaka Toshio
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Kadoshima Masaru
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shiraishi K
Institute Of Physics University Of Tsukuba
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YAMABE Kikuo
Univ. of Tsukuba
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SHIRAISHI Kenji
Univ. of Tsukuba
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TAMURA Chihiro
Univ. of Tsukuba
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HASUNUMA Ryu
Univ. of Tsukuba
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UEDONO Akira
Univ. of Tsukuba
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OHTSUKA Shingo
Semiconductor Leading Edge Technologies, Inc. (Selete)
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WADA Tetsunori
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Yamamoto K
Univ. Of Tsukuba
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Yamamoto K
Kaneka Corporation
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Ohtsuka Shingo
Semiconductor Leading Edge Technologies Inc. (selete)
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Wada Tetsunori
Semiconductor Leading Edge Technologies Inc. (selete)
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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ONIZAWA Takashi
Semiconductor Leading Edge Technologies, Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 306-8571, Japan
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Yamada Keisaku
Waseda University, 513 Waseda Tsurumakicho, Shinjuku, Tokyo 162-0041, Japan
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Eimori Takahisa
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ohji Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ohji Yuzuru
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kitajima Masashi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ohji Yuzuru
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nara Yasuo
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Onizawa Takashi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Miyazaki Seiichi
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
著作論文
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
- Impact of Activation Annealing Temperature on the Performance, Negative Bias Temperature Instability, and Time-to-Dielectric Breakdown Lifetime of High-$k$/Metal Gate Stack p-Type Metal–Oxide–Semiconductor Field Effect Transistors
- Dual-Metal Gate Technology with Metal-Inserted Full Silicide Stack and Ni-Rich Full Silicide Gate Electrodes Using a Single Ni-Rich Full Silicide Phase for Scaled High-$k$ Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
- Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-$k$/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors
- Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
- Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
- Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNx Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors
- Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
- Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-$k$ Gate Stacks