Aminaka Toshio | Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
スポンサーリンク
概要
- Aminaka Toshioの詳細を見る
- 同名の論文著者
- Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japanの論文著者
関連著者
-
Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
-
Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
-
Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
-
Kadoshima Masaru
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Aminaka Toshio
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Kurosawa Etsuo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Kurosawa Etsuo
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Aminaka Toshio
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Kadoshima Masaru
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
-
Ohji Yuzuru
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Kitajima Masashi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Ohji Yuzuru
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Dual-Metal Gate Technology with Metal-Inserted Full Silicide Stack and Ni-Rich Full Silicide Gate Electrodes Using a Single Ni-Rich Full Silicide Phase for Scaled High-$k$ Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
- Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-$k$ Gate Stacks