Kitajima Masashi | Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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概要

関連著者

Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
Kadoshima Masaru
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Ohji Yuzuru
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Aminaka Toshio
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Kurosawa Etsuo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Kitajima Masashi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Kurosawa Etsuo
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
Aminaka Toshio
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
Kadoshima Masaru
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan

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著作論文

Dual-Metal Gate Technology with Metal-Inserted Full Silicide Stack and Ni-Rich Full Silicide Gate Electrodes Using a Single Ni-Rich Full Silicide Phase for Scaled High-$k$ Complementary Metal–Oxide–Semiconductor Field-Effect Transistors

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