Miyazaki Seiichi | Graduate School Of Engineering Nagoya University

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概要

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著作論文

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

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