Hirose Masataka | Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

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概要

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著作論文

Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
Analysis of Tunnel Current through Ultrathin Gate Oxides
Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
Modeling of Soft Breakdown in Ultrathin Gate Oxides
Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch

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