Miyazaki Seiichi | Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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- 同名の論文著者
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関連著者
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki S
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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KAKU Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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Hashimoto M
Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto
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Hashimoto M
Department Of Polymer Science And Engineering Faculty Of Textile Science Kyoto Institute Of Technolo
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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MIYAZAKI Seiichi
Hiroshima University
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Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Namba Tohru
Research Center For Integrated Systems Hiroshima University
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Okamoto Kazuya
Central Research Laboratory Nikon Corporation
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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OKAMOTO Katsuhiko
Department of Electrical Engineering, Hiroshima University
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小柳 光正
東北大学大学院工学研究科機械知能工学専攻知能システム設計学研究室
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Nagata Tetsuya
Hitachi Research Laboratory Hitachi Ltd.
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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FUKUDA Masatoshi
Department of Electrical Engineering, Hiroshima University
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SHIBA Kazutoshi
Department of Electrical Engineering, Hiroshima University
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SHIN Hidetoshi
Department of Electrical Engineering, Hiroshima University
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NAMBA Tohru
Research Center for Integrated Systems, Hiroshima University
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UEHARA Akihito
Research Center for Integrated Systems, Hiroshima University
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NAGATA Takahiko
Research Center for Integrated Systems, Hiroshima University
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Koyanagi Mitsumasa
Research Center for Integrated Systems, Hiroshima University
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YASAKA Tatsuhiro
Department of Electrical Engineering, Hiroshima University
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TAKAKURA Masaru
Department of Electrical Engineering, Hiroshima University
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Sakikawa Nobuki
Department of Electrical Engineering, Hiroshima University
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Nagata Takahiro
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Nagata T
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Koyanagi Mitsumasa
Research Center For Integrated Systems Hiroshima University
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Kawabata K
Division Of Physics Graduate School Of Science Hokkaido University
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OHTA Akio
Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
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NAGATA Takahiro
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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Kohno Atsushi
Department of Radiology, Kobe University
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Kohno A
Operative Dentistry I Tsurumi University School Of Dental Medicine
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Kohno Atsushi
Department Of Diagnostic Imaging Cancer Institute Hospital Japanese Foundation Of Cancer Research
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Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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HIGASHI Seiichiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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KAWABATA Keishi
Department of Electronics, Hiroshima Institute of technology
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HAYASHI Tsukasa
Department of Electrical Engineering University
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MIZUBAYASHI Wataru
Department of Electrical Engineering, Hiroshima University
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KURODA Yasuhide
Research Center for Integrated Systems, Hiroshima University
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IWATA Atushi
Department of Electrical Engineering, Hiroshima University
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HIROSE Masataka
Research Center for Integrated Systems, Hiroshima University
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SHIBA Kazutoshi
NEC Electronics Corporation
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IKEDA Mitsuhisa
Hiroshima University
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XU Jun
Department of Physiology and Biophysics, Institute for Computational Biomedicine, Weill Medical Coll
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Xu J
Institute Of Advanced Materials Fudan University
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Kohno A
Hiroshima Univ. Higashi-hiroshima Jpn
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Yamada Kazushi
Department Of Polymer Science And Engineering Kyoto Institute Of Technology
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Miyazaki Seiichi
Hiroshima Univ.
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Kaku Hirotaka
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Xu Jun
Liquid Crystal Institute And Graduate School Of Engineering Science Tokyo University Of Science
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Xu J
Akita Univ. Akita Jpn
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Xu J
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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YOSHIDA Takeshi
Department of Gastroenterology, Hokkaido University Graduate School of Medicine
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Yoshida E
Faculty Of Pharmaceutical Sciences Chiba University
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Yoshida Eiji
Ntt Access Network Systems Laboratories Optical Soliton Transmission Research Group
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Yoshida E
Institute Of Applied Physics University Of Tsukuba
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KIRIKI Yoshihiro
Department of Electrical Engineering, Hiroshima University
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INOUE Yushi
Department of Electrical Engineering, Hiroshima University
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SHIRATSUKI Yoshiyuki
Department of Electrical Engineering, Hiroshima University
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MIHARA Tatsuyoshi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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SHIMIZU Naoji
Department of Electrical Engineering, Hiroshima University
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YOSHIDA Eiji
Department of Electrical Engineering, Hiroshima University
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DEKI Hidenori
Department of Electrical Engineering, Hiroshima University
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NAKAGAWA Kazuyuki
Department of Electrical Engineering, Hiroshima University
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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DOI Takeshi
Department of Electrical Engineering, Hiroshima University
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Miyake Kouji
Research Center for Integrated Systems, Hiroshima University
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SAWARA Kenichi
Research Center for Integrated Systems, Hiroshima University
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KINOSHITA Tsuyoshi
Department of Electrical Engineering, Hiroshima University
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SUNADA Takeshi
Department of Electrical Engineering, Hiroshima University
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ITOKAWA Hiroshi
Department of Electrical Engineering, Hiroshima University
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MURAYAMA Kazuro
College of Humanities and Sciences, Nihon University
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Tamao Masaki
Department of Electrical Engineering, Hiroshima University
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SHISHIDA Yoshinori
Department of Electrical Engineering, Hiroshima University
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Yamada Keiichi
Department Of Electrical Engineering Hiroshima University
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Shimizu Naoji
Department Of Electrical Engineering Hiroshima University
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Tamura K
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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SHIMIZU Naofumi
NTT Optical Network Systems Laboratories
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Mihara Tatsuyoshi
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Nakagawa Kazuyuki
Department Of Electrical Engineering Hiroshima University
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Shishida Yoshinori
Department Of Electrical Engineering Hiroshima University
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Kinoshita Takayuki
The Institute For Solid State Physics The University Of Tokyo:(present Sddress)fujisawa Development
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Shimizu N
Department Of Electrical Engineering Hiroshima University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Doi Takeshi
Faculty Of Engineering Hiroshima University
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Doi T
Department Of Bio- And Geoscience Graduate School Of Science Osaka City University
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Miyake K
Toyohashi Univ. Technol. Toyohashi Jpn
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Deki Hidenori
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Electrical
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Sunada Takeshi
Department Of Electrical Engineering Hiroshima University
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YAMADA Keiichi
Department of Chemistry, Gunma University
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堀池 靖浩
物質･材料研究機構
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YOSHIDA Yuichi
Department of Dermatology, School of Medicine, Fukuoka University
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OKADA Tatsuya
Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima
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Ikeda Makoto
Faculty Of Technology Tokyo University Of Agriculture And Technology
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MURAKAMI Hideki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Iwata A
Hiroshima Univ. Higashi-hiroshima‐shi Jpn
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Hazama Yasushi
Department Of Electrical Engineering Hiroshima University
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SAKAUE Hiroyuki
Department of Electrical Engineering, Hiroshima University
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SAMESHIMA Toshiyuki
Department of Electrical and Electric Engineering, Tokyo University of Agriculture and Technology
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Ikeda M
Sony Corporation Research Center
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Tanaka Takeshi
Department Of Cardiology The Heart Institute Of Japan
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Ikeda M
Tdk Electronic Device Business Group Akita Jpn
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SAKAUE Hiroyuki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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FURUKAWA Hirokazu
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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SAKAIKE Kohei
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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NAGAMACHI Satoru
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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HIGASHI Seiichirou
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Ando Nobuyuki
Department Of Applied Chemistry Faculty Of Engineering Chiba University
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Watakabe Hajime
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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IWATA Atsushi
A-R-Tec Corporation
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KIRIKI Yoshihiko
Department of Electrical Engineering, Hiroshima University
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HAYASHI Tsukasa
Nissin Electric Co.
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YAMADA Keichi
Department of Electrical Engineering, Hiroshima University
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Hayashi Tsukasa
Nisshin Electric Co.
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OGURA Tsuyoshi
Department of Electrical Engineering University
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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Yamashita Hiroki
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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NAKAGAWA Kouji
Department of Electrical Engineering, Hiroshima University
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Bjorkman Claes
Research Center for Integrated Systems, Hiroshima University
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Yamazaki Tadayuki
Department of Electrical Engineering, Hiroshima University
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Inayoshi Muneto
Department Of Quantum Engineering School Of Engineering Nagoya Univeristy
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SAKAMOTO Kunihide
Department of Electrical Engineering, Hiroshima University
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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HIROSE Masataka
Faculty of Engineering, Hiroshima University
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Miyamoto Takahiro
Research Center for Integrated Systems, Hiroshima University
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Hashimoto Kenji
Research Center for Integrated Systems, Hiroshima University
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Horiike Yasuhiro
Research Center for Integrated Systems, Hiroshima University
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HIROSHIMA Masahito
Department of Electrical Engineering, Hiroshima University
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URANISHI Tadashi
Department of Electrical Engineering, Hiroshima University
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KANDA Kozo
Department of Electrical Engineering, Hiroshima University
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SUGIYAMA Tsutomu
Department of Electrical Engineering, Hiroshima University
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MARUYAMA Tetsuhiro
Department of Electrical Engineering, Hiroshima University
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IMAFUKU Daisuke
Department of Electrical Engineering, Hiroshima University
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ALAY Josep
Research Center for Integrated Systems, Hiroshima University
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YAMAKAWA Shinpei
Department of Electrical Engineering, Hiroshima University
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Miyoshi Yasutoshi
Department of Electrical Engineering, Hiroshima University
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SHINOHARA Masato
Department of Electrical Engineering, Hiroshima University
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Horiike Yasuhiro
Faculty Of Engineering Toyo University
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Horiike Yasuhiro
National Institute For Materials Science
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical Engineering Toyo University
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OGURA Toru
Government Industrial Research Institute
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YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Yamakawa Shinpei
Department Of Electrical Engineering Hiroshima University
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Yamashita Hiroki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Shinohara Masato
Department Of Electrical Engineering Hiroshima University
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Miyoshi Yasutoshi
Department Of Electrical Engineering Hiroshima University
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Ito M
Wakayama Univ. Wakayama Jpn
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Iwata Atsushi
Electronic Materials And Devices Division Mitsubishi Petrochemical Co. Ltd.
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Shimizu Yusuke
Department Of Applied Physics And Physico-informatics Keio University
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Ikeda M
Toshiba Corp. Kawasaki Jpn
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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TSUKUDE Masaki
Department of Electrical Engineering, Hiroshima University
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AKAMATSU Susumu
Department of Electrical Engineering, Hiroshima University
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TESHIMA Akitomo
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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DEGUCHI Koji
Department of Electrical Engineering, Hiroshima University
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HIROSE Msataka
Department of Electrical Engineering, Hiroshima University
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堀池 靖浩
広島大工
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Teshima A
Hiroshima Univ. Higashi‐hiroshima Jpn
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Teshima Akitomo
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Sakaue H
Hiroshima University Graduate School Of Adsm
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Kanda K
Univ. Tokyo Tokyo Jpn
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Ae Tadashi
Department Of Electrical Engineering Hiroshima University
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Alay Josep
Research Center For Integrated Systems Hiroshima University
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Deguchi Koji
Department Of Electrical Engineering Hiroshima University
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Sakaike Kohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Takeno Fumito
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Tsukude Masaki
Department Of Electrical Engineering Hiroshima University
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Hirose Msataka
Department Of Electrical Engineering Hiroshima University
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Bjorkman Claes
Research Center For Integrated Systems Hiroshima University
著作論文
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
- Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- Luminescence from Thermally Oxidized Porous Silicon
- Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
- Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- Amorphous Silicon Superlattice Thin Film Transistors
- Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Improved Performance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure : Semiconductors
- High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
- Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure
- Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition
- Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
- Native Oxidation Growth on Ge(111) and (100) Surfaces
- Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication
- Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation
- Formation of Cobalt and Cobalt-Silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-Nitrided Si(100)
- Optically Interconnected Kohonen Net for Pattern Recognition
- Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
- Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- Analysis of Soft Breakdown of 2.6–4.9-nm-Thick Gate Oxides
- Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
- Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
- Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
- Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation
- Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases
- In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor