Improved Performance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-11-15

著者

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• TESHIMA Akitomo

  Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ

• Teshima A

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Teshima Akitomo

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

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• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
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• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
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