New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
-
Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
-
Miyazaki S
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
-
TESHIMA Akitomo
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
-
Teshima Akitomo
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
関連論文
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
- Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-Nitrided Si(100)
- Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
- Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
- Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- Luminescence from Thermally Oxidized Porous Silicon
- Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Optically Interconnected Kohonen Net for Pattern Recognition
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
- Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- Amorphous Silicon Superlattice Thin Film Transistors
- New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors
- Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Improved Performance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure : Semiconductors
- High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
- Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure
- Analysis of Soft Breakdown of 2.6-4.9-nm-Thick Gate Oxides
- Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition
- Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication