Analysis of Soft Breakdown of 2.6-4.9-nm-Thick Gate Oxides
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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MIZUBAYASHI Wataru
Department of Electrical Engineering, Hiroshima University
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