High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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XU Jun
Department of Physiology and Biophysics, Institute for Computational Biomedicine, Weill Medical Coll
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Xu J
Institute Of Advanced Materials Fudan University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Xu Jun
Liquid Crystal Institute And Graduate School Of Engineering Science Tokyo University Of Science
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Xu J
Akita Univ. Akita Jpn
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Xu J
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Hirose M
Materials Research Center Tdk Corporation
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Xu Jun
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Xu Jun
Department Of Bioengineering College Of Life Science And Technology Beijing University Of Chemical T
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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