High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Nagata Tetsuya

  Hitachi Research Laboratory Hitachi Ltd.

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• YOKOYAMA Shin

  Research Center for Nanodevices and Systems, Hiroshima University

• Yokoyama Seiji

  School Of Material Science Japan Advanced Institute Of Science And Technology

• SHIBAHARA Kentaro

  Research Center for Nanodevices and Systems, Hiroshima University

• NAMBA Tohru

  Research Center for Integrated Systems, Hiroshima University

• UEHARA Akihito

  Research Center for Integrated Systems, Hiroshima University

• DOI Takeshi

  Department of Electrical Engineering, Hiroshima University

• NAGATA Takahiko

  Research Center for Integrated Systems, Hiroshima University

• KURODA Yasuhide

  Research Center for Integrated Systems, Hiroshima University

• IWATA Atushi

  Department of Electrical Engineering, Hiroshima University

• HIROSE Masataka

  Research Center for Integrated Systems, Hiroshima University

• Nagata Takahiro

  Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University

• Yokoyama Shin

  Research Center For Integrated Systems Hiroshima University

• Yokoyama S

  Research Center For Nanodevices And Systems Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Nagata T

  Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University

• Shibahara K

  Research Center For Nanodevices And Systems Hiroshima University

• Namba Tohru

  Research Center For Integrated Systems Hiroshima University

• Doi Takeshi

  Faculty Of Engineering Hiroshima University

• Doi T

  Department Of Bio- And Geoscience Graduate School Of Science Osaka City University

• Uehara Akihito

  Department Of Applied Chemistry Kogakuin University

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• Hirose Masataka

  Research Center For Integrated Systems Hiroshima University

• Kuroda Yasuhide

  Research Center For Integrated Systems Hiroshima University

• Doi Takeshi

  Department Of Bio- And Geoscience Graduate School Of Science Osaka City University

• Yokoyama S

  Kyushu Univ. Fukuoka Jpn

• Shibahara Kentaro

  Research Center For Nanodevices And Systems Hiroshima University

関連論文

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• Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
• Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
• Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-Nitrided Si(100)
• Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
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• Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
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• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
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• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
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• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
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• Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
• Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
• Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
• Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
• Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
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• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
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• Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
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• Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
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