Miyazaki Seiichi | Dept. Of Electrical Engineering Hiroshima University
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概要
関連著者
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Murakami H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami H
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MIYAZAKI S.
Graduate School of Advanced Sciences of Matter, Hiroshima Univ.
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Higashi S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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Miyazaki S
Graduate School Of Advanced Sciences And Matters Hiroshima University
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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Hashimoto M
Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto
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Hashimoto M
Department Of Polymer Science And Engineering Faculty Of Textile Science Kyoto Institute Of Technolo
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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MURAKAMI H.
Department of Physics, Rikkyo University
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Nara Y.
Semiconductor Leading Edge Technology Inc.
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Okamoto Kazuya
Central Research Laboratory Nikon Corporation
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OKAMOTO Katsuhiko
Department of Electrical Engineering, Hiroshima University
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INUMIYA S.
Semiconductor Leading Edge Technologies, Inc. (Selete)
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NARA Y.
Selete
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Inumiya S.
Semicondutor Leading Edge Technologies Inc.
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小柳 光正
東北大学大学院工学研究科機械知能工学専攻知能システム設計学研究室
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Nagata Tetsuya
Hitachi Research Laboratory Hitachi Ltd.
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FUKUDA Masatoshi
Department of Electrical Engineering, Hiroshima University
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SHIN Hidetoshi
Department of Electrical Engineering, Hiroshima University
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NAMBA Tohru
Research Center for Integrated Systems, Hiroshima University
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Koyanagi Mitsumasa
Research Center for Integrated Systems, Hiroshima University
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YASAKA Tatsuhiro
Department of Electrical Engineering, Hiroshima University
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TAKAKURA Masaru
Department of Electrical Engineering, Hiroshima University
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Sakikawa Nobuki
Department of Electrical Engineering, Hiroshima University
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Pei Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Nagata Takahiro
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Pei Y.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nagata T
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Namba Tohru
Research Center For Integrated Systems Hiroshima University
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Koyanagi Mitsumasa
Research Center For Integrated Systems Hiroshima University
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Shin Hidetoshi
Department Of Electrical Engineering Hiroshima University
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Kawabata K
Division Of Physics Graduate School Of Science Hokkaido University
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NAGATA Takahiro
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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Kohno Atsushi
Department of Radiology, Kobe University
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Kohno A
Operative Dentistry I Tsurumi University School Of Dental Medicine
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Kohno Atsushi
Department Of Diagnostic Imaging Cancer Institute Hospital Japanese Foundation Of Cancer Research
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KAWABATA Keishi
Department of Electronics, Hiroshima Institute of technology
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HAYASHI Tsukasa
Department of Electrical Engineering University
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MIZUBAYASHI Wataru
Department of Electrical Engineering, Hiroshima University
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SHIBA Kazutoshi
Department of Electrical Engineering, Hiroshima University
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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HIROSE Masataka
Faculty of Engineering, Hiroshima University
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NAGATA Takahiko
Research Center for Integrated Systems, Hiroshima University
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KURODA Yasuhide
Research Center for Integrated Systems, Hiroshima University
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HIROSE Masataka
Research Center for Integrated Systems, Hiroshima University
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MURAYAMA Kazuro
College of Humanities and Sciences, Nihon University
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SHIBA Kazutoshi
NEC Electronics Corporation
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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XU Jun
Department of Physiology and Biophysics, Institute for Computational Biomedicine, Weill Medical Coll
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Xu J
Institute Of Advanced Materials Fudan University
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Kohno A
Hiroshima Univ. Higashi-hiroshima Jpn
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Yamada Kazushi
Department Of Polymer Science And Engineering Kyoto Institute Of Technology
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Xu Jun
Liquid Crystal Institute And Graduate School Of Engineering Science Tokyo University Of Science
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Xu J
Akita Univ. Akita Jpn
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Xu J
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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YOSHIDA Takeshi
Department of Gastroenterology, Hokkaido University Graduate School of Medicine
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KIRIKI Yoshihiro
Department of Electrical Engineering, Hiroshima University
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INOUE Yushi
Department of Electrical Engineering, Hiroshima University
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SHIRATSUKI Yoshiyuki
Department of Electrical Engineering, Hiroshima University
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DEKI Hidenori
Department of Electrical Engineering, Hiroshima University
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MIYAZAKI Seiichi
Faculty of Engineering, Hiroshima University
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UEHARA Akihito
Research Center for Integrated Systems, Hiroshima University
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DOI Takeshi
Department of Electrical Engineering, Hiroshima University
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IWATA Atushi
Department of Electrical Engineering, Hiroshima University
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Miyake Kouji
Research Center for Integrated Systems, Hiroshima University
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SAWARA Kenichi
Research Center for Integrated Systems, Hiroshima University
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KINOSHITA Tsuyoshi
Department of Electrical Engineering, Hiroshima University
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SUNADA Takeshi
Department of Electrical Engineering, Hiroshima University
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Tamao Masaki
Department of Electrical Engineering, Hiroshima University
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SHISHIDA Yoshinori
Department of Electrical Engineering, Hiroshima University
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Yamada Keiichi
Department Of Electrical Engineering Hiroshima University
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Tamura K
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Shishida Yoshinori
Department Of Electrical Engineering Hiroshima University
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Kinoshita Takayuki
The Institute For Solid State Physics The University Of Tokyo:(present Sddress)fujisawa Development
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Doi Takeshi
Faculty Of Engineering Hiroshima University
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Doi T
Department Of Bio- And Geoscience Graduate School Of Science Osaka City University
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Miyake K
Toyohashi Univ. Technol. Toyohashi Jpn
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Deki Hidenori
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Electrical
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Sunada Takeshi
Department Of Electrical Engineering Hiroshima University
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Sawara Kenichi
Research Center For Integrated Systems Hiroshima University:(present Address) Sumitomo Chemical Co.
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Uehara Akihito
Department Of Applied Chemistry Kogakuin University
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知京 豊裕
物材機構
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知京 豊裕
(独)物質・材料研究機構
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IKEDA Mitsuhisa
Hiroshima University
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MIYAZAKI Seiichi
Hiroshima University
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赤坂 泰志
東京エレクトロン株式会社
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YAMADA Keiichi
Department of Chemistry, Gunma University
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知京 豊裕
金属材料技術研究所
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堀池 靖浩
物質・材料研究機構
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YOSHIDA Yuichi
Department of Dermatology, School of Medicine, Fukuoka University
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Ikeda Makoto
Faculty Of Technology Tokyo University Of Agriculture And Technology
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山田 啓作
筑波大学数理物質科学研究科
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白石 賢二
筑波大学
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Iwata A
Hiroshima Univ. Higashi-hiroshima‐shi Jpn
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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Hazama Yasushi
Department Of Electrical Engineering Hiroshima University
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大毛利 健治
早稲田大学ナノ理工学研究機構
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Murakami H
Institute For Molecular Science
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SAKAUE Hiroyuki
Department of Electrical Engineering, Hiroshima University
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Ikeda M
Sony Corporation Research Center
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Kohno Atsushi
Department Of Electrical Engineering Hiroshima University
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Ishibashi Koji
Department Of Applied Physics And Dimes Delft University Of Technology:the Institute Of Physical And
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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SAKAUE Hiroyuki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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FUKUDA M.
Department of Physics, Osaka Univ.
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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IWATA Atsushi
A-R-Tec Corporation
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Murakami Hisashi
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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KIRIKI Yoshihiko
Department of Electrical Engineering, Hiroshima University
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HAYASHI Tsukasa
Nissin Electric Co.
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YAMADA Keichi
Department of Electrical Engineering, Hiroshima University
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Hayashi Tsukasa
Nisshin Electric Co.
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OGURA Tsuyoshi
Department of Electrical Engineering University
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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MIYAZAKI Seiichiand
Department of Electrical Engineering, Hiroshima University
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NAKAGAWA Kouji
Department of Electrical Engineering, Hiroshima University
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NAKAGAWA Kazuyuki
Department of Electrical Engineering, Hiroshima University
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Bjorkman Claes
Research Center for Integrated Systems, Hiroshima University
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Yamazaki Tadayuki
Department of Electrical Engineering, Hiroshima University
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Inayoshi Muneto
Department Of Quantum Engineering School Of Engineering Nagoya Univeristy
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SAKAMOTO Kunihide
Department of Electrical Engineering, Hiroshima University
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MAEDA Jun-ichi
Research Center for Nanodevices and Systems, Hiroshima University
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SASAKI Yasushi
Research Center for Nanodevices and Systems, Hiroshima University
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DIETZ Nikolaus
Research Center for Nanodevices and Systems, Hiroshima University
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Miyamoto Takahiro
Research Center for Integrated Systems, Hiroshima University
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Hashimoto Kenji
Research Center for Integrated Systems, Hiroshima University
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Horiike Yasuhiro
Research Center for Integrated Systems, Hiroshima University
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RADZIMSKI Zbigniew
Research Center for Integrated Systems, Hiroshima University
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ISHIBASHI Kensaku
Faculty of Engineering, Hiroshima University
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HIROSHIMA Masahito
Department of Electrical Engineering, Hiroshima University
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URANISHI Tadashi
Department of Electrical Engineering, Hiroshima University
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KANDA Kozo
Department of Electrical Engineering, Hiroshima University
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SUGIYAMA Tsutomu
Department of Electrical Engineering, Hiroshima University
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ITOKAWA Hiroshi
Department of Electrical Engineering, Hiroshima University
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Dietz Nikolaus
Research Center For Nanodevices And Systems Hiroshima University:department Of Physics North Carolin
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Maeda Jun-ichi
Research Center For Nanodevices And Systems Hiroshima University
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IMAFUKU Daisuke
Department of Electrical Engineering, Hiroshima University
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ALAY Josep
Research Center for Integrated Systems, Hiroshima University
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KOMATSU Hitoshi
College of Humanities and Sciences, Nihon University
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HIROSE Masataka
Dept. of Electrical Engineering, Hiroshima University
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知京 豊裕
(独)物質・材料研究機構 半導体材料センター
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YAMAKAWA Shinpei
Department of Electrical Engineering, Hiroshima University
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Miyoshi Yasutoshi
Department of Electrical Engineering, Hiroshima University
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SHINOHARA Masato
Department of Electrical Engineering, Hiroshima University
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Horiike Yasuhiro
Faculty Of Engineering Toyo University
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Horiike Yasuhiro
National Institute For Materials Science
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical Engineering Toyo University
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SHIRAISHI K.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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AKASAKA Y.
Semiconductor Leading Edge Technology Inc.
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CHIKYOW T.
National Institute of Materials Science
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YAMABE K.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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YAMADA K.
Nanotechnology Research Laboratories, Waseda University
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UMEZAWA N.
Advanced Electronic Materials Center, National Institute for Materials Science
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UEDONO A.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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HASUNUMA R.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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MOMIDA H.
Computational Materials Science Center, National Institute for Materials Science
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OHNO T.
Computational Materials Science Center, National Institute for Materials Science
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OHMORI K.
Advanced Electronic Materials Center, National Institute for Materials Science
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CHIKYOW T.
Advanced Electronic Materials Center, National Institute for Materials Science
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山田 啓作
筑波大学大学院数理物質科学研究科
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OGURA Toru
Government Industrial Research Institute
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Yamakawa Shinpei
Department Of Electrical Engineering Hiroshima University
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Shinohara Masato
Department Of Electrical Engineering Hiroshima University
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Nakagawa Kazuyuki
Department Of Electrical Engineering Hiroshima University
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Miyoshi Yasutoshi
Department Of Electrical Engineering Hiroshima University
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Ito M
Wakayama Univ. Wakayama Jpn
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Iwata Atsushi
Electronic Materials And Devices Division Mitsubishi Petrochemical Co. Ltd.
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Murakami H
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Ikeda M
Toshiba Corp. Kawasaki Jpn
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堀池 靖浩
広島大工
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Sakaue H
Hiroshima University Graduate School Of Adsm
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Uedono A.
Graduate School Of Pure And Applied Sciences Univ. Of Tsukuba
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Kanda K
Univ. Tokyo Tokyo Jpn
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Alay Josep
Research Center For Integrated Systems Hiroshima University
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Radzimski Zbigniew
Research Center For Integrated Systems Hiroshima University:(present Address)analytical Instrumentat
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Komatsu Hitoshi
College Of Humanities And Sciences Nihon University
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Bjorkman Claes
Research Center For Integrated Systems Hiroshima University
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Bjorkman C.
Research Center For Integrated Systems Hiroshima University
著作論文
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
- Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- Luminescence from Thermally Oxidized Porous Silicon
- Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Phonon Interaction in the Luminescence of Porous Silicon
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
- Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
- Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
- Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
- Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
- Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
- Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
- Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
- Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
- Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
- Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
- Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
- Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
- Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
- Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors