CHIKYOW T. | Advanced Electronic Materials Center, National Institute for Materials Science
スポンサーリンク
概要
関連著者
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知京 豊裕
物材機構
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知京 豊裕
(独)物質・材料研究機構
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赤坂 泰志
東京エレクトロン株式会社
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Nara Y.
Semiconductor Leading Edge Technology Inc.
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知京 豊裕
金属材料技術研究所
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山田 啓作
筑波大学数理物質科学研究科
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白石 賢二
筑波大学
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大毛利 健治
早稲田大学ナノ理工学研究機構
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AKASAKA Y.
Semiconductor Leading Edge Technology Inc.
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CHIKYOW T.
National Institute of Materials Science
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UMEZAWA N.
Advanced Electronic Materials Center, National Institute for Materials Science
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OHMORI K.
Advanced Electronic Materials Center, National Institute for Materials Science
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CHIKYOW T.
Advanced Electronic Materials Center, National Institute for Materials Science
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NARA Y.
Selete
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山田 啓作
筑波大学大学院数理物質科学研究科
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大毛利 健治
早稲田大学ナノ理工学研究機構ナノテクノロジー研究所
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Umezawa N.
Advanced Electronic Materials Center National Institute For Materials Science
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山田 啓作
筑波大学大学院数理物質科学研究科:JST-CREST
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吉武 道子
物質・材料研究機構 半導体材料センター
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CHANG K.-S.
National Institute for Standards and Technology
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GREEN M.
National Institute for Standards and Technology
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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渡部 平司
大阪大学大学院工学研究科
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Green M.
National Institute Of Standards And Technology
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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知京 豊裕
(独)物質・材料研究機構 半導体材料センター
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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SHIRAISHI K.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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YAMABE K.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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YAMADA K.
Nanotechnology Research Laboratories, Waseda University
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INUMIYA S.
Semiconductor Leading Edge Technologies, Inc. (Selete)
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MIYAZAKI S.
Graduate School of Advanced Sciences of Matter, Hiroshima Univ.
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UEDONO A.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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HASUNUMA R.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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MOMIDA H.
Computational Materials Science Center, National Institute for Materials Science
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OHNO T.
Computational Materials Science Center, National Institute for Materials Science
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AHMET P.
Tokyo Institute of Technology
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SHIRAISHI K.
University of Tsukuba
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YAMABE K.
University of Tsukuba
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WATANABE H.
Osaka University
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AKASAKA Y.
Selete
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NAKAJIMA K.
Advanced Electronic Materials Center, National Institute for Materials Science
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YOSHITAKE M.
Advanced Electronic Materials Center, National Institute for Materials Science
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NAKAYAMA T.
Chiba University
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KAKUSHIMA K.
Tokyo Institute of Technology
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IWAI H.
Tokyo Institute of Technology
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YAMADA K.
Waseda University
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Murakami H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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吉武 道子
物質・材料研究機構
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吉武 道子
「応用物理」 編集委員会
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Murakami H
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Uedono A.
Graduate School Of Pure And Applied Sciences Univ. Of Tsukuba
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Inumiya S.
Semicondutor Leading Edge Technologies Inc.
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吉武 道子
物質材料研究機構 半導体材料研究センター
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Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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吉武 道子
金材技研
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Yamabe K.
Graduate School Of Pure And Applied Sciences Univ. Of Tsukuba
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Hasunuma R.
Graduate School Of Pure And Applied Sciences Univ. Of Tsukuba
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Nakaoka T.
Chiba University
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Shiraishi K.
Graduate School Of Pure And Applied Sciences Univ. Of Tsukuba
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Akasaka Y.
Semiconductor Leading Edge Technologies Inc. (selete)
著作論文
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2